Strontium Bismuth Tantalate Ceramic

Strontium bismuth tantalate strontium bismuth tantalum oxide sbt is a ferroelectric ceramic for dielectric applications in electronics and other advanced technologies.

Strontium bismuth tantalate ceramic.

Strontium bismuth tantalate sbt ferroelectric thin films have attracted considerable attention for the de velopment of non volatile ferroelectric random access memories nv frams. Jacers is a leading source for top quality basic science research and modeling spanning the diverse field of ceramic and glass materials science. A high processing temperature 700oc is required for the crystallization of the perovskite phase. The optimum poling conditions temperature t p time t p and electric field e p were.

Gonzalez tantalum penta glycolate sol as a precursor of strontium bismuth tantalate ferroelectric thin films journal of the american ceramic society 88 10 2702 2005. These films however have a critical problem. American elements can produce strontium bismuth tantalate in various compositions based on customer needs. The processing conditions microstructure and dielectric properties of strontium bismuth niobate vanadate ceramics srbi2 vxnb1 x 2o9 sbvn with 0 x 0 3 were systematically studied.

Synthesis and characterisation of oxide ions conductors with the apatite structure for intermediate temperature sofc p 1177. Strontium bismuth tantalate sbt thin films containing sr defect and bi excess have been prepared by chemical solution deposition onto spontaneously oxidized si 100 substrates with two different heterostructure electrodes. Ferroelectric and piezoelectric properties of strontium bismuth tantalate ceramics p 1169. Layered perovskite sbt films were crystallized in oxygen by rapid thermal processing at 973 k for 1 h with an intermediate treatment at 823 k for 2 h.

Microanalysis of pb zr ti w li o 3 piezoeceramic p 1173. Heating the mixtures of bitao 4 and srco 3 at 800 c resulted in the entire formation of a single phase srbi 2 ta 2 o 9 the formation process of this compound was verified to be a direct reaction occurring between the reactants without the presence of intermediates. Using bitao 4 as the precursor ferroelectric strontium bismuth tantalate srbi 2 ta 2 o 9 was successfully synthesized.